Please check my google scholar page for the most up-to-date publication
2019
[DAC] J. Wu, H. Zhong, K. Ni, Y. Liu, H. Yang, X. Li, “A 3T/Cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs,” Proceedings of the 56th Annual Design Automation Conference 2019
[APL] A. K. Saha, K. Ni, S. Dutta, S. Datta, S. Gupta, “Phase field modeling of domain dynamics and polarization accumulation in ferroelectric HZO,” Applied Physics Letters 114 (20), 2019
[EDTM] J. Gomez, S. Dutta, K. Ni, S. Joshi, S. Datta, “Steep slope ferroelectric field effect transistor,” Electron Devices Technology and Manufacturing Conference (EDTM), 59-61, 2019
[Design & Test] X. Li, J. Wu, K. Ni, S. George, K. Ma, J. Sampson, S. K. Gupta, Y. Liu, H. Yang, S. Datta, V. Narayanan, “Design of 2T/cell and 3T/cell nonvolatile memories with emerging ferroelectric FETs,” IEEE Design & Test 36 (3), 39-45, 2019
2018
[TCAS-II] X. Yin, K. Ni, D. Reis, S. Datta, M. Niemier, X. S. Hu, “An Ultra-dense 2FeFET TCAM Design based on a Multi-Domain FeFET Model,” IEEE Transactions on Circuits and Systems II: Express Briefs, 2018
[IEDM] K. Ni, J. A. Smith, B. Grisafe, T. Rakshit, B. Obradovic, J. A. Kittl, M. Rodder, S. Datta, “SoC Logic Compatible Multi-Bit FeMFET Weight Cell for Neuromorphic Applications,” IEEE International Electron Devices Meeting (IEDM), 2018
[IEDM] K. Ni, B. Grisafe, W. Chakraborty, A. K. Saha, S. Dutta, M. Jerry, J. A. Smith, S. Gupta, S. Datta, “In-Memory Computing Primitive for Sensor Data Fusion in 28 nm HKMG FeFET Technology,” IEEE International Electron Devices Meeting (IEDM), 2018
[IEDM] X. Sun, P. Wang, K. Ni, S. Datta, S. Yu, “Exploiting Hybrid Precision for Training and Inference: A 2T-1FeFET Based Analog Synaptic Weight Cell,” IEEE International Electron Devices Meeting (IEDM), 2018
[EDL] K. Ni, X. Li, J. A. Smith, M. Jerry, S. Datta, “Write Disturb in Ferroelectric FETs and Its Implication for 1T-FeFET AND Memory Arrays,” IEEE Electron Device Letters 39 (11), 1656-1659, 2018
[Nature Electronics] S. Salahuddin, K. Ni, S. Datta, “The era of hyper-scaling in electronics,” Nature Electronics 1 (8), 442, 2018
[TCAS-I] X. Chen, K. Ni, M. T. Niemier, Y. Han, S. Datta, X. S. Hu, “Power and Area Efficient FPGA Building Blocks Based on Ferroelectric FETs,” IEEE Transactions on Circuits and Systems I: Regular Papers, 2018
[TNS] H. Gong, K. Ni, E. X. Zhang, A. L. Sternberg, J. A. Kozub, M. L. Alles, R. A. Reed, D. M. Fleetwood, R. D. Schrimpf, N. Waldron, B. Kunert, D. Linten, “Pulsed-laser induced single-event transients in InGaAs FinFETs on bulk silicon substrates,” IEEE Transactions on Nuclear Science 66 (1), 376-383, 2018
[JPhysD] M. Jerry, S. Dutta, A. Kazemi, K. Ni, J. Zhang, P. Y. Chen, P. Sharma, S. Yu, X. S. Hu, M. Niemier, S. Datta, “A Ferroelectric field effect transistor based synaptic weight cell,” Journal of Physics D: Applied Physics 51 (43), 2018
[TNS] P. F. Wang, E. X. Zhang, K. H. Chuang, W. Liao, H. Gong, P. Wang, C. N. Arutt, K. Ni, M. W. McCurdy, I. Verbauwhede, E. Bury, D. Linten, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, “X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices,” IEEE Transactions on Nuclear Science 65 (8), 1519-1524, 2018
[DRC] M. Jerry, J. A. Smith, K. Ni, A. Saha, S. Gupta, S. Datta, “Insights on the DC Characterization of Ferroelectric Field-Effect-Transistors,” 76th Device Research Conference, 2018
[DRC] I. Yoon, M. Chang, K. Ni, M. Jerry, S. Gangopadhyay, G. Smith, T. Hamam, V. Narayanan, J. Romberg, S. L. Lu, S. Datta, A. Raychowdhury, “A FeFET Based Processing-In-Memory Architecture for Solving Distributed Least-Square Optimizations,” 76th Device Research Conference, 2018
[VLSI] K. Ni, M. Jerry, J. A. Smith, S. Datta, “A circuit compatible accurate compact model for ferroelectric-FETs,” IEEE Symposium on VLSI Technology, 131-132, 2018
[VLSI] M. Jerry, A. Aziz, K. Ni, S. Datta, S. K. Gupta, N. Shukla, “A Threshold Switch Augmented Hybrid-FeFET (H-FeFET) with Enhanced Read Distinguishability and Reduced Programming Voltage for Non-Volatile Memory Applications,” IEEE Symposium on VLSI Technology, 129-130, 2018
[TED] X. Li, S. George, Y. Liang, K. Ma, K. Ni, A. Aziz, S. K. Gupta, J. Sampson, M. F. Chang, Y. Liu, H. Yang, S. Datta, V. Narayanan, “Lowering Area Overheads for FeFET-Based Energy-Efficient Nonvolatile Flip-Flops,” IEEE Transactions on Electron Devices 65 (6), 2670-2674, 2018
[TED] K. Ni, P. Sharma, J. Zhang, M. Jerry, J. A. Smith, K. Tapily, R. Clark, S. Mahapatra, S. Datta, “Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance,” IEEE Transactions on Electron Devices 65 (6), 2461-2469, 2018
[DATE] A. Aziz, E. T. Breyer, A. Chen, X. Chen, S. Datta, S. K. Gupta, M. Hoffmann, X. S. Hu, A. Ionescu, M. Jerry, T. Mikolajick, H. Mulaosmanovic, K. Ni, M. Niemier, I. O. Connor, A. Saha, S. Slesazeck, S. K. Thirumala, X. Yin, “Computing with ferroelectric FETs: Devices, models, systems, and applications,” Design, Automation & Test in Europe Conference & Exhibition (DATE) 2018
[Nanoscale] S. Sonde, B. Chakrabarti, Y. Liu, K. Sasikumar, J. Lin, L. Stan, R. Divan, L. E. Ocola, D. Rosenmann, P. Choudhury, K. Ni, S. Sankaranarayanan, S. Datta, and S. Guha, “Silicon compatible Sn-based resistive switching memory,” Nanoscale 2018
2017
[EDL] P. Sharma, J. Zhang, K. Ni, and S. Datta, “Time-resolved measurement of negative capacitance,” IEEE Electron Device Letters, 2017
[IEDM] M. Jerry, P. Y. Chen, J. Zhang, P. Sharma, K. Ni, S. Yu, S. Datta, “Ferroelectric FET analog synapse for acceleration of deep neural network training,” IEEE International Electron Devices Meeting (IEDM), 2017
[TNS] H. Gong, K. Ni, E. X. Zhang, A. L. Sternberg, J. A. Kozub, K. L. Ryder, R. F. Keller, L. D. Ryder, S. M. Weiss, R. A. Weller, M. L. Alles, R. A. Reed, D. M. Fleetwood, R. D. Schrimpf, A. Vardi, and J. A. del Alamo, “Scaling effects on single event transients in InGaAs FinFETs,” IEEE Transactions on Nuclear Science, 2017
[EDL] M. Jerry, K. Ni, A. Parihar, A. Raychowdhury, S. Datta, “Stochastic insulator-to-metal phase transition-based true random number generator,” IEEE Electron Device Letters 2017
[APL] Y. S. Puzyrev, X. Shen, C. X. Zhang, J. Hachtel, K. Ni, B. K. Choi, E. X. Zhang, O. Ovchinnikov, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelides, “Memristive devices from ZnO nanowire bundles and meshes,” Applied Physics Letter, 2017
[ESSDERC] J. A. Smith, K. Ni, R. K. Ghosh, J. Xu, M. Badaroglu, P. R. C. Chidambaram, S. Datta, “Investigation of electrically gate-all-around hexagonal nanowire FET (HexFET) architecture for 5nm node logic and SRAM applications,” IEEE European Solid-State Device Research Conference 2017
[TNS] K. Ni, A. L. Sternberg, E. X. Zhang, J. A. Kozub, R. Jiang, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, M. L. Alles, D. McMorrow, J. Lin, A. Vardi, J. A. del Alamo, “Understanding charge collection mechanisms in InGaAs FinFETs using high-speed pulsed laser testing with tunable wavelength,” IEEE Transactions on Nuclear Science, 2017
[DRC] J. A. Smith, M. Barth, K. Ni, M. Cantoro, and S. Datta, “Corrugation of effective gate width in In0.8Ga0.2As quantum well transistors for n-channel applications,” Device Research Conference 2017
[DRC] K. Ni, J. A. Smith, M. Barth, H. Liu, J. H. Warner, K. Saraswat, and S. Datta, “Soft error evaluation for InGaAs and Ge complementary FinFETs,” IEEE Device Research Conference 2017
2016
[TNS] B. Narasimham, K. Chandrasekharan, J. K. Wang, K. Ni, B. L. Bhuva, and R. D. Schrimpf, “Charge steering latch design in 16 nm FinFET for improved soft error hardness,” IEEE Transactions on Nuclear Science, 2016
[TNS] W. Liao, E. X. Zhang, M. L. Alles, C. X. Zhang, H. Gong, K. Ni, A. Sternberg, D. M. Fleetwood, R. A. Reed, and R. D. Schrimpf, “Total ionizing dose effects on piezoelectric micromachined ultrasonic transducer,” IEEE Transactions on Nuclear Science, 2016
[TNS] S. Ren, H. Wu, R. Jiang, M. Bhuiyan, K. Ni, J. Chen, E. X. Zhang, R. A. Reed, D. M. Fleetwood, P. D. Ye and T. P. Ma, “Total ionizing dose effects in ultra-thin body Ge on insulator (GOI) junctionless CMOSFETs with recessed source/drain and channel,” IEEE Transactions on Nuclear Science, 2016
[TNS] K. Ni, E. X. Zhang, R. D. Schrimpf, D. M. Fleetwood, R. A. Reed, M. L. Alles, J. Lin, and J. A. del Alamo, “Gate bias and geometry dependence of total-ionizing-dose effects in InGaAs quantum-well MOSFETs,” IEEE Transactions on Nuclear Science, 2016
[ICSICT] E. Simoen, G. Eneman, A. V. De Oliveira, K. Ni, J. Mitard, L. Witters, P. G. D. Agopian, J. A. Martino, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, N. Collaert, A. Thean, C. Claeys, “On the assessment of electrically active defects in high-mobility materials and devices,” 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2016
[TNS] S. Ren, M. Bhuiyan, J. Zhang, M. Si, R. Jiang, K. Ni, X. Wan, S. Chang, E. X. Zhang, R. A. Reed, D. M. Fleetwood, P. D. Ye, and T. P. Ma, “Total ionizing dose effects in GaAs MOSFETs with La based epitaxial gate dielectrics,” IEEE Transactions on Nuclear Science, 2016
[TNS] C. Liang, Y. Su, E. X. Zhang, K. Ni, M. L. Alles, R. D. Schrimpf, D. M. Fleetwood, and S. J. Koester, “Total ionizing dose effects on passivated black phosphorus transistors,” IEEE Transactions on Nuclear Science, 2016
[RADECS] R. Jiang, J. Chen, K. Ni, X. Shen, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, J. S. Speck, and S. T. Pantelides, “Total ionzing dose effects in passivated and unpassivated AlGaN/GaN HEMTs,” IEEE Radiation Effects on Components and Systems Conference 2016
[RADECS] K. Ni, A. L. Sternberg, E. X. Zhang, J. A. Kozub, R. Jiang, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, M. L. Alles, J. Lin, A. Vardi, J. del Alamo, “Pulsed-laser transient testing with tunable wavelength and high resolution for high mobility MOSFETs,” IEEE Radiation Effects on Components and Systems Conference 2016
[TED] K. Ni, G. Eneman, E. Simoen, A. Mocuta, N. Collaert, A. Thean, R. D. Schrimpf, R. A. Reed, and D. M. Fleetwood, “Electrical effects of a single extended defect in MOSFETs,” IEEE Transactions on Electron Devices, 2016
[IRPS] H. Zhang, H. Jiang, T. R. Assis, D. R. Ball, K. Ni, J. S. Kauppila, R. D. Schrimpf, L. W. Massengill, B. L. Bhuva, B. Narasimham, S. Hatami, A. Anvar, A. Lin, J. K. Wang, “Temperature dependence of soft-error rates for FF designs in 20-nm bulk planar and 16-nm bulk FinFET technologies,” IEEE International Reliability Physics Symposium (IRPS), 2016
[ECS J Solid State Science and Technology] C. Claeys, E. Simoen, G. Eneman, K. Ni, A. Hikavyy, R. Loo, S. Gupta, C. Merckling, A. Alian, and M. Caymax, “Review-device assessment of electrically active defects in high-mobility materials,” ECS J. Solid State Sci. Technol. 2016
2015
[TNS] S. Ren, M. W. Si, K. Ni, X. Wan, J. Chen, S. Chang, X. Sun, E. X. Zhang, R. A. Reed, D. M. Fleetwood, P. D. Ye, S. Cui, and T. P. Ma, “Total ionizing dose effect in extremely scaled ultra-thin channel nanowire gate all around InGaAs MOSFETs,” IEEE Transactions on Nuclear Science, 2015
[TNS] K. Ni, E. X. Zhang, I. K. Samsel, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, A. L. Sternberg, M. W. McCurdy, S. Ren, T. P. Ma, L. Dong, J. Y. Zhang, and P. D. Ye, “Charge collection mechanisms in GaAs MOSFETs,” IEEE Transactions on Nuclear Science, 2015
[TNS] T. R. Assis, K. Ni, J. S. Kauppila, B. L. Bhuva, R. D. Schrimpf, L. W. Massengill, S. J. Wen, R. Wong, and C. Slayman, “Estimation of single-event induced collected charge for multiple transistors using analytical expressions,” IEEE Transactions on Nuclear Science, 2015
[TNS] I. K. Samsel, E. X. Zhang, A. L. Sternberg, K. Ni, R. A. Reed, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, D. Linten, J. Mitard, L. Witters, and N. Collaert, “Charge collection mechanisms of Ge-channel bulk pMOSFETs,” IEEE Transactions on Nuclear Science, 2015
[TNS] B. Narasimham, S. Hatami, A. Anvar, D. M. Harris, A. Lin, J. K. Wang, I. Chatterjee, K. Ni, B. L. Bhuva, R. D. Schrimpf, R. A. Reed, and M. W. McCurdy, “Bias dependence of single-event upsets in 16nm FinFET D-flip-flops,” IEEE Transactions on Nuclear Science, 2015
2014
[TNS] E. X. Zhang, I. K. Samsel, N. C. Hooten, W. G. Bennett, E. D. Funkhouser, K. Ni, D. R. Ball, M. W. McCurdy, D. M. Fleetwood, R. A. Reed, M. L. Alles, R. D. Schrimpf, D. Linten, and J. Mitard, “Heavy-Ion and Laser Induced Charge Collection in SiGe Channel pMOSFETs,” IEEE Transactions on Nuclear Science, 2014
[TNS] K. Ni, E. X. Zhang, N. C. Hooten, W. G. Bennett, M. W. McCurdy, A. L. Sternberg, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, M. L. Alles, T. W. Kim, J. Lin, and J. A. del Alamo, “Single event transient response of InGaAs MOSFETs,” IEEE Transactions on Nuclear Science, 2014